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CHA2391
36-40GHz Very Low Noise Amplifier
GaAs Monolithic Microwave IC Description
The CHA2391 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. IN
50 25
Vd
OUT
Vg 1
Vg 2
Main Features
Broad band performance 36-40GHz 2.5dB noise figure, 36-40GHz 15dB gain, 0.5dB gain flatness Low DC power consumption, 50mA 20dBm 3rd order intercept point Chip size : 1,67 x 1,03 x 0.1mm
Gain (dB)
20 16 12 8 4 0 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz)
5 4 3 2 1 0
On wafer typical measurements. .
Main Characteristics
Tamb = +25C Symbol Fop NF G P1dB Parameter Operating frequency range Noise figure, 36-40GHz Gain Output power at 1dB gain compression 12 Min 36 2.5 15 9 Typ Max 40 3 Unit GHz dB dB dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA23912240 -28-Aug.-02 1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
NF (dB)
CHA2391
Electrical Characteristics
Tamb = +25C, Bias Conditions:Vd = +4V Symbol Fop G G NF VSWRin VSWRout IP3 P1dB Vd
36-40GHz Very Low Noise Amplifier
Parameter Operating frequency range Gain (1) Gain flatness (1) Noise figure (1) Input VSWR (1) Ouput VSWR (1) 3rd order intercept point Output power at 1dB gain compression DC Voltage Vd Vg
Min 36 12
Typ
Max 40
Unit Ghz dB
15 0.5 2.5 1.0 3 3.0:1 3.0:1 20 12 4 -0.25 45 4.5 +0.4
dB dB
dBm dBm V
-2
Id
Drain bias current (2)
mA
(1) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports.When the chip is attached with typical 0.15nH input and output bonding wires, the indicated parameters should be improved. (2) 45 mA is the typical bias current used for on wafer measurements, with Vg1= Vg2. For optimum noise figure, the bias current could be reduced down to 30 mA, adjusting the Vg1,2 voltage.
Absolute Maximum Ratings (1)
Tamb = +25C Symbol Vd Vg Vdg Pin Pin Top Tsg Parameter Drain bias voltage Gate bias voltage Maximum drain to gate voltage (Vd-Vg) Maximum peak input power overdrive (2) Maximum continuous input power Operating temperature range Storage temperature range Values 5.0 -2.0 to +0.4 +5.0 +15 +1 -40 to +85 -55 to +125 Unit V V V dBm dBm C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA23912240 -28-Aug.-02 2/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Very Low Noise Amplifier
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25C Bias conditions: Vd = +4V, Id=45mA Freq GHz 10 12 14 16 18 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 MS11 dB -6,21 -6,33 -6,29 -6,08 -5,84 -5,54 -5,43 -5,30 -5,29 -5,35 -5,54 -5,87 -6,47 -7,39 -8,77 -10,69 -12,44 -12,19 -10,65 -9,85 -9,98 -10,94 -12,52 -13,72 -13,22 -11,65 -10,30 -8,90 -7,51 -6,22 -5,17 -4,24 -3,18 -2,51 -2,04 -1,62 PS11 154,25 141,75 127,36 114,92 101,82 86,62 78,44 68,96 58,88 47,97 35,38 21,00 3,87 -16,23 -41,92 -77,04 -127,88 170,79 120,05 82,96 54,87 33,47 20,51 17,24 18,64 9,29 -3,86 -20,55 -38,62 -59,90 -81,47 -102,42 -122,95 -143,29 -161,80 -178,03 MS12 dB -62,67 -57,99 -55,17 -55,88 -53,92 -51,45 -50,53 -49,42 -49,04 -49,34 -47,96 -46,55 -44,77 -43,13 -40,03 -37,67 -35,70 -33,04 -31,11 -29,60 -28,64 -27,69 -26,89 -26,15 -25,53 -25,06 -24,91 -24,74 -24,62 -24,63 -24,78 -25,30 -25,65 -26,29 -27,21 -27,82 PS12 -132,87 -156,02 173,41 168,49 135,46 138,48 139,32 132,07 122,68 123,59 126,63 123,65 125,28 124,81 123,61 115,28 105,15 93,43 75,77 58,30 42,10 26,41 9,83 -5,87 -22,03 -38,88 -56,23 -72,65 -88,50 -105,66 -122,84 -139,10 -155,88 -173,89 170,58 157,24 MS21 dB -22,58 -16,83 -12,52 -9,73 -7,54 -6,13 -5,41 -4,82 -4,06 -3,25 -2,19 -0,88 0,38 1,88 3,63 5,50 7,35 9,18 10,75 12,14 13,37 14,27 14,95 15,28 15,46 15,53 15,40 15,17 14,89 14,54 14,05 13,39 12,59 11,55 10,40 9,39 PS21 67,85 50,10 23,11 -5,37 -31,47 -55,85 -67,16 -77,06 -85,86 -94,05 -101,60 -110,55 -119,43 -128,85 -138,80 -151,53 -166,04 176,87 158,36 138,69 117,54 95,66 73,24 51,13 29,79 8,33 -12,86 -32,98 -52,97 -73,10 -93,80 -113,54 -133,30 -152,49 -170,65 172,00
CHA2391
MS22 dB -2,93 -3,89 -4,95 -5,86 -7,18 -8,65 -9,65 -10,46 -11,18 -11,33 -11,19 -11,01 -10,17 -9,43 -9,11 -8,70 -8,15 -7,69 -7,59 -7,80 -8,57 -9,80 -11,70 -14,31 -17,89 -23,80 -51,61 -26,28 -20,52 -17,09 -14,60 -12,92 -11,93 -11,14 -10,65 -9,69
PS22 -143,42 -164,87 178,26 161,51 144,01 131,69 127,30 125,73 124,83 125,87 124,77 125,49 122,17 117,25 109,58 103,41 94,50 83,88 70,55 56,02 40,66 25,19 9,54 -4,52 -18,79 -30,52 -16,72 118,15 111,87 101,92 89,21 73,66 59,95 47,16 35,08 20,78
Ref. : DSCHA23912240 -28-Aug.-02
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2391
Typical Results
36-40GHz Very Low Noise Amplifier
Chip Typical Response ( On wafer Sij ) :
Tamb = +25C Vd = +4V Id=45mA
20 15
Gain, RLoss (dB)
10 5 0 -5 -10 -15 -20 20 25 30 35 40 45 50 Frequency (GHz)
dBS11 dBS21 dBS22
Typical Gain and Matching measurements on wafer.
20 16 Gain (dB) 12 8 4 0 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz)
5 4 3 2 1 0 NF (dB)
Typical Gain and Noise Figure measurements on wafer.
Ref. : DSCHA23912240 -28-Aug.-02 4/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Very Low Noise Amplifier
Typical Results
Tamb = +25C Vd = 4V ; Id = 45mA
CHA2391
Freq = 37GHz
16 14 Output Power ( dBm ) 12 10 8 6 4 2 0 -12 -10 -8 -6 -4 -2 0 2 4 6 Input Power ( dBm ) 16 14 12 10 8 6 4 2 0 Gain ( dB )
Freq = 39.5GHz
16 14 Output Power ( dBm ) 12 10 8 6 4 2 0 -14 -12 -10 -8 -6 -4 -2 0 2 4 Input Power ( dBm ) 16 14 12 10 8 6 4 2 0 Gain ( dB )
Typical Output Power and Gain measurements in test jig
(included losses of the jig)
Ref. : DSCHA23912240 -28-Aug.-02 5/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2391
Typical Chip Assembly
36-40GHz Very Low Noise Amplifier
To Vd DC Drain supply feed 47pF
50
25
IN
OUT
47pF To Vg1 DC Gate supply feed
47pF To Vg2 DC Gate supply feed
Note : Supply feed should be capacitively bypassed.
Mechanical data
1670 +/-35 1290 990
1030 +/-35
445
345 645
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
Ref. : DSCHA23912240 -28-Aug.-02 6/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
445
36-40GHz Very Low Noise Amplifier
Chip Biasing
CHA2391
This chip is a two stage amplifier, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way.
Vd 50 IN Vds1 Vg 1
The two requirements are : N1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ).
25 OUT Vds2
Vg 2
We propose two standard biasing : Low Noise and low consumption : Vd = 3.5V and Id = 30mA.
Low Noise and high output power : Vd = 4.0V and Id = 45mA.( A separate access to the gate voltages of the first and the output stage is provided. Nominal bias is obtained for a typical current of 30mA for the output stage and 15 mA for the first stage. The first step to bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then Vg1 is reduced to obtain 45 mA of current through the amplifier.
Ref. : DSCHA23912240 -28-Aug.-02
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2391
36-40GHz Very Low Noise Amplifier
Ordering Information
Chip form : CHA2391-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA23912240 -28-Aug.-02
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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